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ZXMN3A02N8TC

Manufacturer: Diodes Incorporated
REK ID: 136017

Technical Information

Manufacturer Diodes Incorporated 
Series 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 30V 
Current - Continuous Drain (Id) @ 25°C 7.3A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 1V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 26.8nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V 
FET Feature 
Power Dissipation (Max) 1.56W (Ta) 
Rds On (Max) @ Id, Vgs 25 mOhm @ 12A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 8-SO 
Package / Case 8-SOIC (0.154", 3.90mm Width) 

Description

MOSFET N-CH 30V 8SOIC - N-Channel 30V 7.3A (Ta) 1.56W (Ta) Surface Mount 8-SO

Transistors ZXMN3A02N8TC

Datasheet ZXMN3A02N8TC (PDF)

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ZXMN3A02N8TC
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