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ZXMN2A01E6TA

Manufacturer: Diodes Incorporated
REK ID: 136398

Technical Information

Manufacturer Diodes Incorporated 
Series 
Packaging Cut Tape (CT)  
Part Status Active 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 20V 
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 
Vgs(th) (Max) @ Id 700mV @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V 
Vgs (Max) ±12V 
Input Capacitance (Ciss) (Max) @ Vds 303pF @ 15V 
FET Feature 
Power Dissipation (Max) 1.1W (Ta) 
Rds On (Max) @ Id, Vgs 120 mOhm @ 4A, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package SOT-23-6 
Package / Case SOT-23-6 

Description

MOSFET N-CH 20V 2.44 A SOT-23-6 - N-Channel 20V 2.5A (Ta) 1.1W (Ta) Surface Mount SOT-23-6

Transistors ZXMN2A01E6TA

Datasheet ZXMN2A01E6TA (PDF)

Price (check the terms and price with the managers)
Available: 12 psc.
Price available upon request
ZXMN2A01E6TA
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