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VS-FB180SA10P

Manufacturer: Vishay Semiconductor Diodes Division
REK ID: 135155

Technical Information

Manufacturer Vishay Semiconductor Diodes Division 
Series 
Packaging Bulk  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 100V 
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 380nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 10700pF @ 25V 
FET Feature 
Power Dissipation (Max) 480W (Tc) 
Rds On (Max) @ Id, Vgs 6.5 mOhm @ 180A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Chassis Mount 
Supplier Device Package SOT-227 
Package / Case SOT-227-4 

Description

MOSFET N-CH 100V 180A SOT-227 - N-Channel 100V 180A (Tc) 480W (Tc) Chassis Mount SOT-227

Transistors VS-FB180SA10P

Datasheet VS-FB180SA10P (PDF)

Price (check the terms and price with the managers)
Available: 15 psc.
Price available upon request
VS-FB180SA10P
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