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UPA2766T1A-E2-AY

Manufacturer: Renesas Electronics America
REK ID: 134254

Technical Information

Manufacturer Renesas Electronics America 
Series 
Packaging Cut Tape (CT)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 30V 
Current - Continuous Drain (Id) @ 25°C 130A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 
Gate Charge (Qg) (Max) @ Vgs 257nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 10850pF @ 10V 
FET Feature 
Power Dissipation (Max) 1.5W (Ta), 83W (Tc) 
Rds On (Max) @ Id, Vgs 1.82 mOhm @ 39A, 4.5V 
Operating Temperature 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 8-HVSON (5.4x5.15) 
Package / Case 8-PowerVDFN 

Description

MOSFET N-CH 30V 130A 8HVSON - N-Channel 30V 130A (Tc) 1.5W (Ta), 83W (Tc) Surface Mount 8-HVSON (5.4x5.15)

Transistors UPA2766T1A-E2-AY

Datasheet UPA2766T1A-E2-AY (PDF)

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Available: 12 psc.
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UPA2766T1A-E2-AY
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