Manufacturer | Taiwan Semiconductor Corporation |
Series | - |
Packaging | Tape & Reel (TR) |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20.7nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1248pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 89W (Tc) |
Rds On (Max) @ Id, Vgs | 1.25 Ohm @ 3A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252, (D-Pak) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
MOSFET N-CHANNEL 600V 6A TO252 - N-Channel 600V 6A (Tc) 89W (Tc) Surface Mount TO-252, (D-Pak)
Transistors TSM6N60CP ROG
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