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TSM2301CX RFG

Manufacturer: Taiwan Semiconductor Corporation
REK ID: 136157

Technical Information

Manufacturer Taiwan Semiconductor Corporation 
Series 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 20V 
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 
Vgs(th) (Max) @ Id 950mV @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V 
Vgs (Max) ±8V 
Input Capacitance (Ciss) (Max) @ Vds 447pF @ 6V 
FET Feature 
Power Dissipation (Max) 900mW (Ta) 
Rds On (Max) @ Id, Vgs 130 mOhm @ 2.8A, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package SOT-23 
Package / Case TO-236-3, SC-59, SOT-23-3 

Description

MOSFET P-CHANNEL 20V 2.8A SOT23 - P-Channel 20V 2.8A (Tc) 900mW (Ta) Surface Mount SOT-23

Transistors TSM2301CX RFG

Datasheet TSM2301CX RFG (PDF)

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TSM2301CX RFG
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