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TSM1N45CW RPG

Manufacturer: Taiwan Semiconductor Corporation
REK ID: 136151

Technical Information

Manufacturer Taiwan Semiconductor Corporation 
Series 
Packaging Cut Tape (CT)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 450V 
Current - Continuous Drain (Id) @ 25°C 500mA (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4.25V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 10V 
Vgs (Max) ±30V 
Input Capacitance (Ciss) (Max) @ Vds 235pF @ 25V 
FET Feature 
Power Dissipation (Max) 2W (Tc) 
Rds On (Max) @ Id, Vgs 4.25 Ohm @ 250mA, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package SOT-223 
Package / Case TO-261-4, TO-261AA 

Description

MOSFET N-CH 450V 500MA SOT223 - N-Channel 450V 500mA (Tc) 2W (Tc) Surface Mount SOT-223

Transistors TSM1N45CW RPG

Datasheet TSM1N45CW RPG (PDF)

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Available: 7 psc.
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TSM1N45CW RPG
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