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TSM120N10PQ56 RLG

Manufacturer: Taiwan Semiconductor Corporation
REK ID: 136145

Technical Information

Manufacturer Taiwan Semiconductor Corporation 
Series 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 100V 
Current - Continuous Drain (Id) @ 25°C 58A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 3902pF @ 30V 
FET Feature 
Power Dissipation (Max) 36W (Tc) 
Rds On (Max) @ Id, Vgs 12 mOhm @ 30A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 8-PDFN (5x6) 
Package / Case 8-PowerTDFN 

Description

MOSFET N-CH 100V 58A 8PDFN - N-Channel 100V 58A (Tc) 36W (Tc) Surface Mount 8-PDFN (5x6)

Transistors TSM120N10PQ56 RLG

Datasheet TSM120N10PQ56 RLG (PDF)

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TSM120N10PQ56 RLG
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