| Manufacturer | Taiwan Semiconductor Corporation |
| Series | - |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 4.5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 30V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Rds On (Max) @ Id, Vgs | 65 mOhm @ 10A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252, (D-Pak) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
MOSFET N-CHANNEL 60V 10A TO252 - N-Channel 60V 10A (Ta) 45W (Tc) Surface Mount TO-252, (D-Pak)
Transistors TSM10N06CP ROG
The manager will inform you of the total cost including delivery.