| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSIV |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1270pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Rds On (Max) @ Id, Vgs | 7 mOhm @ 12A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Package / Case | 8-PowerVDFN |
MOSFET N-CH 30V 24A 8TSON-ADV - N-Channel 30V 24A (Ta) Surface Mount 8-TSON Advance (3.3x3.3)
Transistors TPCC8009,LQ(O
The manager will inform you of the total cost including delivery.