| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSVI-H |
| Packaging | Tape & Reel (TR) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 830pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Rds On (Max) @ Id, Vgs | 59 mOhm @ 3.1A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | VS-6 (2.9x2.8) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
MOSFET N-CH 60V 6.1A VS6 - N-Channel 60V 6.1A (Ta) 700mW (Ta) Surface Mount VS-6 (2.9x2.8)
Transistors TPC6010-H(TE85L,FM
The manager will inform you of the total cost including delivery.