| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Rds On (Max) @ Id, Vgs | 12 mOhm @ 25A, 10V |
| Operating Temperature | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
MOSFET N-CH 75V 50A TO-220AB - N-Channel 75V 50A (Tc) Through Hole TO-220-3
Transistors TK50E08K3,S1X(S
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