| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSIV |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Rds On (Max) @ Id, Vgs | 8.5 mOhm @ 25A, 10V |
| Operating Temperature | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
MOSFET N-CH 60V 50A TO-220AB - N-Channel 60V 50A (Tc) Through Hole TO-220-3
Transistors TK50E06K3A,S1X(S
The manager will inform you of the total cost including delivery.