| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSIV |
| Packaging | Tape & Reel (TR) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 61nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3110pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 93W (Tc) |
| Rds On (Max) @ Id, Vgs | 18 mOhm @ 20A, 10V |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK+ |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
MOSFET N-CH 100V 40A DPAK-3 - N-Channel 100V 40A (Ta) 93W (Tc) Surface Mount DPAK+
Transistors TK40S10K3Z(T6L1,NQ
The manager will inform you of the total cost including delivery.