| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSVI-H |
| Packaging | Tape & Reel (TR) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 17.5nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Rds On (Max) @ Id, Vgs | 10.8 mOhm @ 20A, 10V |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
MOSFET N-CH 30V 40A DPAK-3 - N-Channel 30V 40A (Ta) Surface Mount DPAK
Transistors TK40P03M1(T6RDS-Q)
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