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TK16V60W,LVQ

Manufacturer: Toshiba Semiconductor and Storage
REK ID: 134707

Technical Information

Manufacturer Toshiba Semiconductor and Storage 
Series DTMOSIV 
Packaging Cut Tape (CT)  
Part Status Discontinued at Digi-Key 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 600V 
Current - Continuous Drain (Id) @ 25°C 15.8A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 3.7V @ 790µA 
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V 
Vgs (Max) ±30V 
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 300V 
FET Feature Super Junction 
Power Dissipation (Max) 139W (Tc) 
Rds On (Max) @ Id, Vgs 190 mOhm @ 7.9A, 10V 
Operating Temperature 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 5-DFN (8x8) 
Package / Case 4-VSFN Exposed Pad 

Description

MOSFET N CH 600V 15.8A 5DFN - N-Channel 600V 15.8A (Ta) 139W (Tc) Surface Mount 5-DFN (8x8)

Transistors TK16V60W,LVQ

Datasheet TK16V60W,LVQ (PDF)

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TK16V60W,LVQ
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