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SUP60N06-12P-GE3

Manufacturer: Vishay Siliconix
REK ID: 132805

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 60V 
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4.5V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 1970pF @ 30V 
FET Feature 
Power Dissipation (Max) 3.25W (Ta), 100W (Tc) 
Rds On (Max) @ Id, Vgs 12 mOhm @ 30A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-220AB 
Package / Case TO-220-3 

Description

MOSFET N-CH 60V 60A TO220AB - N-Channel 60V 60A (Tc) 3.25W (Ta), 100W (Tc) Through Hole TO-220AB

Transistors SUP60N06-12P-GE3

Datasheet SUP60N06-12P-GE3 (PDF)

Price (check the terms and price with the managers)
Available: 4 psc.
Price available upon request
SUP60N06-12P-GE3
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