Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Packaging | Tube |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 9.2A (Ta), 53A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 115nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3500pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 3.1W (Ta), 104.2W (Tc) |
Rds On (Max) @ Id, Vgs | 19.5 mOhm @ 30A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
MOSFET P-CH 60V 9.2A TO220AB - P-Channel 60V 9.2A (Ta), 53A (Tc) 3.1W (Ta), 104.2W (Tc) Through Hole TO-220AB
Transistors SUP53P06-20-GE3
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