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SUP40N10-30-GE3

Manufacturer: Vishay Siliconix
REK ID: 132800

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 100V 
Current - Continuous Drain (Id) @ 25°C 38.5A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 
Vgs(th) (Max) @ Id 4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V 
FET Feature 
Power Dissipation (Max) 3.1W (Ta), 89W (Tc) 
Rds On (Max) @ Id, Vgs 30 mOhm @ 15A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-220AB 
Package / Case TO-220-3 

Description

MOSFET N-CH 100V 38.5A TO220AB - N-Channel 100V 38.5A (Tc) 3.1W (Ta), 89W (Tc) Through Hole TO-220AB

Transistors SUP40N10-30-GE3

Datasheet SUP40N10-30-GE3 (PDF)

Price (check the terms and price with the managers)
Available: 12 psc.
Price available upon request
SUP40N10-30-GE3
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