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SUP36N20-54P-E3

Manufacturer: Vishay Siliconix
REK ID: 132799

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 200V 
Current - Continuous Drain (Id) @ 25°C 36A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V, 15V 
Vgs(th) (Max) @ Id 4.5V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 127nC @ 15V 
Vgs (Max) ±25V 
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 25V 
FET Feature 
Power Dissipation (Max) 3.12W (Ta), 166W (Tc) 
Rds On (Max) @ Id, Vgs 53 mOhm @ 20A, 15V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-220AB 
Package / Case TO-220-3 

Description

MOSFET N-CH 200V 36A TO220AB - N-Channel 200V 36A (Tc) 3.12W (Ta), 166W (Tc) Through Hole TO-220AB

Transistors SUP36N20-54P-E3

Datasheet SUP36N20-54P-E3 (PDF)

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SUP36N20-54P-E3
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