Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Packaging | Tape & Reel (TR) |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 160nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4600pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 18.8W (Ta), 125W (Tc) |
Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 14A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263 (D2Pak) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
MOSFET P-CH 100V 36A D2PAK - N-Channel 100V 36A (Tc) 18.8W (Ta), 125W (Tc) Surface Mount TO-263 (D2Pak)
Transistors SUM50P10-42-E3
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