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SUD50N10-18P-GE3

Manufacturer: Vishay Siliconix
REK ID: 132317

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Digi-Reel®  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 100V 
Current - Continuous Drain (Id) @ 25°C 8.2A (Ta), 50A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 5V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 50V 
FET Feature 
Power Dissipation (Max) 3W (Ta), 136.4W (Tc) 
Rds On (Max) @ Id, Vgs 18.5 mOhm @ 15A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package TO-252, (D-Pak) 
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 

Description

MOSFET N-CH 100V 8.2A DPAK - N-Channel 100V 8.2A (Ta), 50A (Tc) 3W (Ta), 136.4W (Tc) Surface Mount TO-252, (D-Pak)

Transistors SUD50N10-18P-GE3

Datasheet SUD50N10-18P-GE3 (PDF)

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SUD50N10-18P-GE3
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