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SUD42N03-3M9P-GE3

Manufacturer: Vishay Siliconix
REK ID: 134972

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Cut Tape (CT)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 30V 
Current - Continuous Drain (Id) @ 25°C 42A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2.5V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 3535pF @ 15V 
FET Feature 
Power Dissipation (Max) 2.5W (Ta), 73.5W (Tc) 
Rds On (Max) @ Id, Vgs 3.9 mOhm @ 22A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package TO-252 
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 

Description

MOSFET N-CH 30V 42A TO252 - N-Channel 30V 42A (Tc) 2.5W (Ta), 73.5W (Tc) Surface Mount TO-252

Transistors SUD42N03-3M9P-GE3

Datasheet SUD42N03-3M9P-GE3 (PDF)

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SUD42N03-3M9P-GE3
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