| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 17pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Rds On (Max) @ Id, Vgs | 2.1 Ohm @ 500mA, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | S-Mini |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 60V 200MA SMD - N-Channel 60V 200mA (Ta) 200mW (Ta) Surface Mount S-Mini
Transistors SSM3K7002BS,LF
The manager will inform you of the total cost including delivery.