| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 4.8nC @ 4V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 320pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Rds On (Max) @ Id, Vgs | 56 mOhm @ 2A, 4V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TSM |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 20V 3.5A TSM - N-Channel 20V 3.5A (Ta) 700mW (Ta) Surface Mount TSM
Transistors SSM3K301T(TE85L,F)
The manager will inform you of the total cost including delivery.