Manufacturer | Toshiba Semiconductor and Storage |
Series | π-MOSVI |
Packaging | Digi-Reel® |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
Vgs(th) (Max) @ Id | - |
Vgs (Max) | ±10V |
Input Capacitance (Ciss) (Max) @ Vds | 152pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 1.25W (Ta) |
Rds On (Max) @ Id, Vgs | 120 mOhm @ 1.6A, 4V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TSM |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 30V 3.2A TSM - N-Channel 30V 3.2A (Ta) 1.25W (Ta) Surface Mount TSM
Transistors SSM3K01T(TE85L,F)
The manager will inform you of the total cost including delivery.