| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSII |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs(th) (Max) @ Id | - |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 413pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Rds On (Max) @ Id, Vgs | 85 mOhm @ 1.35A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TSM |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
MOSFET P-CH 30V 2.7A TSM - P-Channel 30V 2.7A (Ta) 700mW (Ta) Surface Mount TSM
Transistors SSM3J14TTE85LF
The manager will inform you of the total cost including delivery.