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SQD50N04-09H-GE3

Manufacturer: Vishay Siliconix
REK ID: 132938

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Cut Tape (CT)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 40V 
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 5V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 76nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 4240pF @ 25V 
FET Feature 
Power Dissipation (Max) 83W (Tc) 
Rds On (Max) @ Id, Vgs 9 mOhm @ 20A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package TO-252, (D-Pak) 
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 

Description

MOSFET N-CH 40V 50A TO252 - N-Channel 40V 50A (Tc) 83W (Tc) Surface Mount TO-252, (D-Pak)

Transistors SQD50N04-09H-GE3

Datasheet SQD50N04-09H-GE3 (PDF)

Price (check the terms and price with the managers)
Available: 8 psc.
Price available upon request
SQD50N04-09H-GE3
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