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SQ3427EEV-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 133311

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Digi-Reel®  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 60V 
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2.5V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 1125pF @ 30V 
FET Feature 
Power Dissipation (Max) 5W (Tc) 
Rds On (Max) @ Id, Vgs 82 mOhm @ 4.5A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 6-TSOP 
Package / Case SOT-23-6 Thin, TSOT-23-6 

Description

MOSFET P-CH 60V 5.5A 6TSOP - P-Channel 60V 5.5A (Tc) 5W (Tc) Surface Mount 6-TSOP

Transistors SQ3427EEV-T1-GE3

Datasheet SQ3427EEV-T1-GE3 (PDF)

Price (check the terms and price with the managers)
Available: 12 psc.
Price available upon request
SQ3427EEV-T1-GE3
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