| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 545pF @ 30V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Tc) |
| Rds On (Max) @ Id, Vgs | 150 mOhm @ 2.4A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
MOSFET P-CH 60V 2.5A SOT23 - P-Channel 60V 2.5A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)
Transistors SQ2361EES-T1-GE3
The manager will inform you of the total cost including delivery.