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SQ2319ES-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 135001

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Cut Tape (CT)  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 40V 
Current - Continuous Drain (Id) @ 25°C 4.6A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2.5V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V 
FET Feature 
Power Dissipation (Max) 3W (Tc) 
Rds On (Max) @ Id, Vgs 75 mOhm @ 3A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package SOT-23-3 (TO-236) 
Package / Case TO-236-3, SC-59, SOT-23-3 
Base Part Number SQ2319 

Description

MOSFET P-CH 40V 4.6A TO-236 - P-Channel 40V 4.6A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)

Transistors SQ2319ES-T1-GE3

Datasheet SQ2319ES-T1-GE3 (PDF)

Price (check the terms and price with the managers)
Available: 4 psc.
Price available upon request
SQ2319ES-T1-GE3
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