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SQ1420EEH-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 133304

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Cut Tape (CT)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 60V 
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2.5V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 215pF @ 25V 
FET Feature 
Power Dissipation (Max) 3.3W (Tc) 
Rds On (Max) @ Id, Vgs 140 mOhm @ 1.2A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package SC-70-6 (SOT-363) 
Package / Case 6-TSSOP, SC-88, SOT-363 

Description

MOSFET N-CH 60V 1.6A SC70-6 - N-Channel 60V 1.6A (Tc) 3.3W (Tc) Surface Mount SC-70-6 (SOT-363)

Transistors SQ1420EEH-T1-GE3

Datasheet SQ1420EEH-T1-GE3 (PDF)

Price (check the terms and price with the managers)
Available: 8 psc.
Price available upon request
SQ1420EEH-T1-GE3
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