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SPD50N03S207GBTMA1

Manufacturer: Infineon Technologies
REK ID: 133765

Technical Information

Manufacturer Infineon Technologies 
Series OptiMOS™ 
Packaging Digi-Reel®  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 30V 
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 85µA 
Gate Charge (Qg) (Max) @ Vgs 46.5nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 2170pF @ 25V 
FET Feature 
Power Dissipation (Max) 136W (Tc) 
Rds On (Max) @ Id, Vgs 7.3 mOhm @ 50A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package PG-TO252-3 
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 

Description

MOSFET N-CH 30V 50A TO252-3 - N-Channel 30V 50A (Tc) 136W (Tc) Surface Mount PG-TO252-3

Transistors SPD50N03S207GBTMA1

Datasheet SPD50N03S207GBTMA1 (PDF)

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SPD50N03S207GBTMA1
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