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SPD30N03S2L20GBTMA1

Manufacturer: Infineon Technologies
REK ID: 133762

Technical Information

Manufacturer Infineon Technologies 
Series OptiMOS™ 
Packaging Digi-Reel®  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 30V 
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2V @ 23µA 
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 25V 
FET Feature 
Power Dissipation (Max) 60W (Tc) 
Rds On (Max) @ Id, Vgs 20 mOhm @ 18A, 10V 
Operating Temperature -55°C ~ 175°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package PG-TO252-3 
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 

Description

MOSFET N-CH 30V 30A TO252-3 - N-Channel 30V 30A (Tc) 60W (Tc) Surface Mount PG-TO252-3

Transistors SPD30N03S2L20GBTMA1

Datasheet SPD30N03S2L20GBTMA1 (PDF)

Price (check the terms and price with the managers)
Available: 16 psc.
Price available upon request
SPD30N03S2L20GBTMA1
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