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SISA18DN-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 134116

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Cut Tape (CT)  
Part Status Discontinued at Digi-Key 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 30V 
Current - Continuous Drain (Id) @ 25°C 38.3A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2.4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 10V 
Vgs (Max) +20V, -16V 
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 15V 
FET Feature 
Power Dissipation (Max) 3.2W (Ta), 19.8W (Tc) 
Rds On (Max) @ Id, Vgs 7.5 mOhm @ 10A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package PowerPAK® 1212-8 
Package / Case PowerPAK® 1212-8 

Description

MOSFET N-CH 30V 38.3A 1212-8 - N-Channel 30V 38.3A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8

Transistors SISA18DN-T1-GE3

Datasheet SISA18DN-T1-GE3 (PDF)

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SISA18DN-T1-GE3
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