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SIR876DP-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 132299

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Digi-Reel®  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 100V 
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2.8V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 1640pF @ 50V 
FET Feature 
Power Dissipation (Max) 5W (Ta), 62.5W (Tc) 
Rds On (Max) @ Id, Vgs 10.8 mOhm @ 20A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package PowerPAK® SO-8 
Package / Case PowerPAK® SO-8 

Description

MOSFET N-CH 100V 40A PPAK SO-8 - N-Channel 100V 40A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8

Transistors SIR876DP-T1-GE3

Datasheet SIR876DP-T1-GE3 (PDF)

Price (check the terms and price with the managers)
Available: 14 psc.
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SIR876DP-T1-GE3
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