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SIR838DP-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 132296

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Digi-Reel®  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 150V 
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 2075pF @ 75V 
FET Feature 
Power Dissipation (Max) 5.4W (Ta), 96W (Tc) 
Rds On (Max) @ Id, Vgs 33 mOhm @ 8.3A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package PowerPAK® SO-8 
Package / Case PowerPAK® SO-8 

Description

MOSFET N-CH 150V 35A PPAK SO-8 - N-Channel 150V 35A (Tc) 5.4W (Ta), 96W (Tc) Surface Mount PowerPAK® SO-8

Transistors SIR838DP-T1-GE3

Datasheet SIR838DP-T1-GE3 (PDF)

Price (check the terms and price with the managers)
Available: 15 psc.
Price available upon request
SIR838DP-T1-GE3
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