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SIR646DP-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 134877

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Digi-Reel®  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 40V 
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 2.2V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V 
Vgs (Max) ±20V 
Input Capacitance (Ciss) (Max) @ Vds 2230pF @ 20V 
FET Feature 
Power Dissipation (Max) 5W (Ta), 54W (Tc) 
Rds On (Max) @ Id, Vgs 3.8 mOhm @ 20A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package PowerPAK® SO-8 
Package / Case PowerPAK® SO-8 

Description

MOSFET N-CH 40V 60A PPAK 8SO - N-Channel 40V 60A (Tc) 5W (Ta), 54W (Tc) Surface Mount PowerPAK® SO-8

Transistors SIR646DP-T1-GE3

Datasheet SIR646DP-T1-GE3 (PDF)

Price (check the terms and price with the managers)
Available: 10 psc.
Price available upon request
SIR646DP-T1-GE3
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