| Manufacturer | Vishay Siliconix |
| Series | - |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 273nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5682pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 417W (Tc) |
| Rds On (Max) @ Id, Vgs | 72 mOhm @ 24A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AD |
| Package / Case | TO-247-3 |
MOSFET N-CH 650V 47A TO-247AD - N-Channel 650V 47A (Tc) 417W (Tc) Through Hole TO-247AD
Transistors SIHW47N65E-GE3
The manager will inform you of the total cost including delivery.