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SIHP30N60E-GE3

Manufacturer: Vishay Siliconix
REK ID: 134912

Technical Information

Manufacturer Vishay Siliconix 
Series 
Packaging Tape & Reel (TR)  
Part Status Active 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 600V 
Current - Continuous Drain (Id) @ 25°C 29A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V 
Vgs (Max) ±30V 
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 100V 
FET Feature 
Power Dissipation (Max) 250W (Tc) 
Rds On (Max) @ Id, Vgs 125 mOhm @ 15A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Through Hole 
Supplier Device Package TO-220AB 
Package / Case TO-220-3 

Description

MOSFET N-CH 600V 29A TO220AB - N-Channel 600V 29A (Tc) 250W (Tc) Through Hole TO-220AB

Transistors SIHP30N60E-GE3

Datasheet SIHP30N60E-GE3 (PDF)

Price (check the terms and price with the managers)
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SIHP30N60E-GE3
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