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SIHB22N60S-E3

Manufacturer: Vishay Siliconix
REK ID: 132756

Technical Information

Manufacturer Vishay Siliconix 
Series 
Packaging Tape & Reel (TR)  
Part Status Discontinued at Digi-Key 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 600V 
Current - Continuous Drain (Id) @ 25°C 22A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 10V 
Vgs(th) (Max) @ Id 4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V 
Vgs (Max) ±30V 
Input Capacitance (Ciss) (Max) @ Vds 2810pF @ 25V 
FET Feature 
Power Dissipation (Max) 250W (Tc) 
Rds On (Max) @ Id, Vgs 190 mOhm @ 11A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package TO-263 (D²Pak) 
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 

Description

MOSFET N-CH 600V 22A D2PAK - N-Channel 600V 22A (Tc) 250W (Tc) Surface Mount TO-263 (D²Pak)

Transistors SIHB22N60S-E3

Datasheet SIHB22N60S-E3 (PDF)

Price (check the terms and price with the managers)
Available: 5 psc.
Price available upon request
SIHB22N60S-E3
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