Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Packaging | Digi-Reel® |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 138nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 6100pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
Rds On (Max) @ Id, Vgs | 1.6 mOhm @ 25A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 10-PolarPAK® (L) |
Package / Case | 10-PolarPAK® (L) |
MOSFET N-CH 30V 60A POLARPAK - N-Channel 30V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)
Transistors SIE848DF-T1-GE3
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