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SIA850DJ-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 133813

Technical Information

Manufacturer Vishay Siliconix 
Series LITTLE FOOT® 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 190V 
Current - Continuous Drain (Id) @ 25°C 950mA (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 
Vgs(th) (Max) @ Id 1.4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 10V 
Vgs (Max) ±16V 
Input Capacitance (Ciss) (Max) @ Vds 90pF @ 100V 
FET Feature Schottky Diode (Isolated) 
Power Dissipation (Max) 1.9W (Ta), 7W (Tc) 
Rds On (Max) @ Id, Vgs 3.8 Ohm @ 360mA, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package PowerPAK® SC-70-6 Dual 
Package / Case PowerPAK® SC-70-6 Dual 

Description

MOSFET N-CH 190V 0.95A SC70-6 - N-Channel 190V 950mA (Tc) 1.9W (Ta), 7W (Tc) Surface Mount PowerPAK® SC-70-6 Dual

Transistors SIA850DJ-T1-GE3

Datasheet SIA850DJ-T1-GE3 (PDF)

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SIA850DJ-T1-GE3
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