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SI8467DB-T2-E1

Manufacturer: Vishay Siliconix
REK ID: 132275

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Digi-Reel®  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 20V 
Current - Continuous Drain (Id) @ 25°C 
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 
Vgs(th) (Max) @ Id 1.5V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V 
Vgs (Max) ±12V 
Input Capacitance (Ciss) (Max) @ Vds 475pF @ 10V 
FET Feature 
Power Dissipation (Max) 780mW (Ta), 1.8W (Tc) 
Rds On (Max) @ Id, Vgs 73 mOhm @ 1A, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 4-Microfoot 
Package / Case 4-XFBGA, CSPBGA 

Description

MOSFET P-CH 20V MICROFOOT - P-Channel 20V 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot

Transistors SI8467DB-T2-E1

Datasheet SI8467DB-T2-E1 (PDF)

Price (check the terms and price with the managers)
Available: 8 psc.
Price available upon request
SI8467DB-T2-E1
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