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SI8451DB-T2-E1

Manufacturer: Vishay Siliconix
REK ID: 132270

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 20V 
Current - Continuous Drain (Id) @ 25°C 10.8A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 
Vgs(th) (Max) @ Id 1V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 24nC @ 8V 
Vgs (Max) ±8V 
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 10V 
FET Feature 
Power Dissipation (Max) 2.77W (Ta), 13W (Tc) 
Rds On (Max) @ Id, Vgs 80 mOhm @ 1A, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 6-Micro Foot™ (1.5x1) 
Package / Case 6-MICRO FOOT™ 

Description

MOSFET P-CH 20V 10.8A MICROFOOT - P-Channel 20V 10.8A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1)

Transistors SI8451DB-T2-E1

Datasheet SI8451DB-T2-E1 (PDF)

Price (check the terms and price with the managers)
Available: 16 psc.
Price available upon request
SI8451DB-T2-E1
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