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SI8445DB-T2-E1

Manufacturer: Vishay Siliconix
REK ID: 132268

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Cut Tape (CT)  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 20V 
Current - Continuous Drain (Id) @ 25°C 9.8A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V 
Vgs(th) (Max) @ Id 850mV @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 16nC @ 5V 
Vgs (Max) ±5V 
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 10V 
FET Feature 
Power Dissipation (Max) 1.8W (Ta), 11.4W (Tc) 
Rds On (Max) @ Id, Vgs 84 mOhm @ 1A, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 4-Microfoot 
Package / Case 4-XFBGA, CSPBGA 

Description

MOSFET P-CH 20V 9.8A MICROFOOT - P-Channel 20V 9.8A (Tc) 1.8W (Ta), 11.4W (Tc) Surface Mount 4-Microfoot

Transistors SI8445DB-T2-E1

Datasheet SI8445DB-T2-E1 (PDF)

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SI8445DB-T2-E1
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