Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Packaging | Cut Tape (CT) |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 9.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
Vgs(th) (Max) @ Id | 850mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 5V |
Vgs (Max) | ±5V |
Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Ta), 11.4W (Tc) |
Rds On (Max) @ Id, Vgs | 84 mOhm @ 1A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 4-Microfoot |
Package / Case | 4-XFBGA, CSPBGA |
MOSFET P-CH 20V 9.8A MICROFOOT - P-Channel 20V 9.8A (Tc) 1.8W (Ta), 11.4W (Tc) Surface Mount 4-Microfoot
Transistors SI8445DB-T2-E1
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