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SI8416DB-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 133627

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Digi-Reel®  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 8V 
Current - Continuous Drain (Id) @ 25°C 16A (Tc) 
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V 
Vgs(th) (Max) @ Id 800mV @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V 
Vgs (Max) ±5V 
Input Capacitance (Ciss) (Max) @ Vds 1470pF @ 4V 
FET Feature 
Power Dissipation (Max) 2.77W (Ta), 13W (Tc) 
Rds On (Max) @ Id, Vgs 23 mOhm @ 1.5A, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package 6-microfoot 
Package / Case 6-UFBGA 

Description

MOSFET N-CH 8V 16A MICRO - N-Channel 8V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-microfoot

Transistors SI8416DB-T1-GE3

Datasheet SI8416DB-T1-GE3 (PDF)

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