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SI7860DP-T1-E3

Manufacturer: Vishay Siliconix
REK ID: 134154

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Digi-Reel®  
Part Status Obsolete 
FET Type N-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 30V 
Current - Continuous Drain (Id) @ 25°C 11A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 
Vgs(th) (Max) @ Id 3V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V 
Vgs (Max) ±20V 
FET Feature 
Power Dissipation (Max) 1.8W (Ta) 
Rds On (Max) @ Id, Vgs 8 mOhm @ 18A, 10V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package PowerPAK® SO-8 
Package / Case PowerPAK® SO-8 

Description

MOSFET N-CH 30V 11A PPAK SO-8 - N-Channel 30V 11A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8

Transistors SI7860DP-T1-E3

Datasheet SI7860DP-T1-E3 (PDF)

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SI7860DP-T1-E3
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