| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 800µA |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| Vgs (Max) | ±12V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 1.3W (Ta) |
| Rds On (Max) @ Id, Vgs | 48 mOhm @ 6.3A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8 |
| Package / Case | PowerPAK® 1212-8 |
MOSFET P-CH 20V 4.3A 1212-8 PPAK - P-Channel 20V 4.3A (Ta) 1.3W (Ta) Surface Mount PowerPAK® 1212-8
Transistors SI7703EDN-T1-GE3
The manager will inform you of the total cost including delivery.