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SI7703EDN-T1-GE3

Manufacturer: Vishay Siliconix
REK ID: 132261

Technical Information

Manufacturer Vishay Siliconix 
Series TrenchFET® 
Packaging Tape & Reel (TR)  
Part Status Obsolete 
FET Type P-Channel 
Technology MOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss) 20V 
Current - Continuous Drain (Id) @ 25°C 4.3A (Ta) 
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 
Vgs(th) (Max) @ Id 1V @ 800µA 
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V 
Vgs (Max) ±12V 
FET Feature Schottky Diode (Isolated) 
Power Dissipation (Max) 1.3W (Ta) 
Rds On (Max) @ Id, Vgs 48 mOhm @ 6.3A, 4.5V 
Operating Temperature -55°C ~ 150°C (TJ) 
Mounting Type Surface Mount 
Supplier Device Package PowerPAK® 1212-8 
Package / Case PowerPAK® 1212-8 

Description

MOSFET P-CH 20V 4.3A 1212-8 PPAK - P-Channel 20V 4.3A (Ta) 1.3W (Ta) Surface Mount PowerPAK® 1212-8

Transistors SI7703EDN-T1-GE3

Datasheet SI7703EDN-T1-GE3 (PDF)

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SI7703EDN-T1-GE3
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